Field electron emission from amorphous carbon thin films grown by RF magnetron sputtering

Using a RF magnetron sputtering, amorphous carbon (a-C) and N-doped a-C (a-C:N) thin films were fabricated as field electron emitter. These thin films were deposited on Si(0 0 1) substrate at several temperatures. The field emission property was improved for a-C thin films grown at higher substrate...

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Bibliographic Details
Published inCurrent applied physics Vol. 5; no. 4; pp. 387 - 391
Main Authors Ryu, Jeong-Tak, Honda, Shin-Ichi, Katayama, Mitsuhiro, Oura, Kenjiro
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.2005
Subjects
Amorphous carbon
Field electron emission
RF magnetron sputtering
Surface morphology
RF magnetron sputtering
Field electron emission
Amorphous carbon
Surface morphology
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Summary:Using a RF magnetron sputtering, amorphous carbon (a-C) and N-doped a-C (a-C:N) thin films were fabricated as field electron emitter. These thin films were deposited on Si(0 0 1) substrate at several temperatures. The field emission property was improved for a-C thin films grown at higher substrate temperatures. Furthermore, a-C:N film exhibits field emission property better than that of undoped a-C film. These results are explained in terms of the change in surface morphology and structural properties of a-C film.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2004.04.003