Triple Metal Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System

The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET (TMSG – JL – TFET) based 6 T SRAM structure is demonstrated by employing Germanium (Ge) and High-K gate dielectric material. The high – K insulation guarantees the proposed device to be used in low leakage memory sy...

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Bibliographic Details
Published inSILICON Vol. 13; no. 5; pp. 1691 - 1702
Main Authors Priya, G. Lakshmi, Venkatesh, M., Balamurugan, N. B., Samuel, T. S. Arun
Format Journal Article
LanguageEnglish
Published Dordrecht Springer Netherlands 01.05.2021
Springer Nature B.V
Subjects
Boundary conditions
Chemistry
Chemistry and Materials Science
Electric fields
Engineering schools
Environmental Chemistry
Germanium
Inorganic Chemistry
Lasers
Leakage
Materials Science
Mathematical models
Optical Devices
Optics
Original Paper
Photonics
Polymer Sciences
Silicon
Static random access memory
Threshold voltage
Tunnels
Delay analysis
Germanium
Junctionless
SRAM
Standby leakage power
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Summary:The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET (TMSG – JL – TFET) based 6 T SRAM structure is demonstrated by employing Germanium (Ge) and High-K gate dielectric material. The high – K insulation guarantees the proposed device to be used in low leakage memory systems. The corresponding analytical model is developed to extract various device parameters such as surface potential, electric field and threshold voltage. The results yield minimization of hot carrier effects at the drain end, when compared to conventional Silicon (Si) based Tunnel FETs (TFETs). Further, the ambipolar characteristics of the proposed device is explored and 6 T Ge – TMS – SG – JL – TFET based SRAM design is proposed. The results are compared with CMOS based SRAM and the analytical model presented is validated using 3D - TCAD ATLAS simulation, which ensures the accuracy and exactness of the developed model.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-021-01075-7