Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors

• Published in: Solid-state electronics Vol. 114; pp. 30 - 34
• Main Authors: Gonzalez-Medina, J.M., Ruiz, F.G., Marin, E.G., Godoy, A., Gámiz, F.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.12.2015
• Subjects: Mobility; MoS2; Multilayer; Semiconductor devices; Mobility; Multilayer; Semiconductor devices; MoS2
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2015.07.007

•The phonon-limited mobility of few-layer MoS2 FETs is numerically evaluated.•The influence of the semiconductor thickness, the temperature and the bias conditions are analyzed.•A good agreement with the experimental results presented in the literature is achieved.•A non-monotonic behavior of the mobility with the device size is found, due to the influence of the polar optical phonons. This work analyzes the electron mobility in few-layer MoS2-based metal–insulator-semiconductor field-effect transistors. To do it, the Poisson and Schrödinger equations are self consistently solved using the effective mass approximation to model the six equivalent Λ valleys characteristic of multilayer MoS2. The mobility is calculated using the Kubo-Greenwood approach under the momentum relaxation time approximation. The influence of the semiconductor thickness, the temperature and the bias conditions are analyzed. A good agreement with the experimental results presented in the literature is achieved, with electron mobilities ranging between 140 and 200cm2V-1s-1 at T=300K.