Dependence of Surface-Loss Probability of Hydrogen Atom on Pressures in Very High Frequency Parallel-Plate Capacitively Coupled Plasma

Relatively high-pressure (several hundred Pa) plasma was used for very high rate deposition of silicon thin films. We studied the loss kinetics of hydrogen atoms, which influence microcrystalline silicon film property in capacitively coupled plasma at relatively high-pressure using vacuum ultraviole...

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Bibliographic Details
Published inApplied physics express Vol. 3; no. 10; pp. 106001 - 106001-3
Main Authors Abe, Yusuke, Kawashima, Sho, Takeda, Keigo, Sekine, Makoto, Hori, Masaru
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.10.2010
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Summary:Relatively high-pressure (several hundred Pa) plasma was used for very high rate deposition of silicon thin films. We studied the loss kinetics of hydrogen atoms, which influence microcrystalline silicon film property in capacitively coupled plasma at relatively high-pressure using vacuum ultraviolet laser absorption spectroscopy. Increasing the pressures from 66.5 to 665 Pa, we found that the decay time constants of H atom were significantly lengthened from measurements of afterglow plasmas. In addition, surface-loss probabilities of the H atom decreased as the pressure increased.
Bibliography:Schematic diagram of the experimental setup of the VHF CCP employing H 2 and the VUVLAS system. Absolute densities and translational temperatures of H atoms in the VHF-CCP H 2 plasmas as a function of pressure. The inset shows typical absorption ratio spectra of the L \alpha line. Decay curves of H atom density during afterglow of an on--off modulated H 2 plasma. Decay time constant of the H atom density as a function of pressure. Surface-loss probability of H atoms as a function of pressure.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.3.106001