Dielectric thermally conductive boron nitride/silica@MWCNTs/polyvinylidene fluoride composites via a combined electrospinning and hot press method

• Published in: Journal of materials science. Materials in electronics Vol. 35; no. 15; p. 1032
• Main Authors: Wu, Zijian, Gao, Shunying, Wang, Xuefei, Ibrahim, Mohamed M., Mersal, Gaber A. M., Ren, Juanna, El-Bahy, Zeinhom M., Guo, Ning, Gao, Junguo, Weng, Ling, Guo, Zhanhu
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2024; Springer Nature B.V
• Subjects: Boron nitride; Characterization and Evaluation of Materials; Chemistry and Materials Science; Electrical insulation; Electrical resistivity; Electrospinning; Fluorides; Heat conductivity; Heat transfer; Hot pressing; Materials Science; Microelectronics; Multi wall carbon nanotubes; Optical and Electronic Materials; Polymer matrix composites; Polyvinylidene fluorides; Silicon dioxide; Synergistic effect; Thermal conductivity
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-024-12794-z

With the development of microelectronics towards integration, miniaturization and high power, the accumulation of heat in this small space has become a serious problem. Therefore, polymer matrix composites with high thermal conductivity and electrical insulation need to be developed urgently. Here, an ordered oriented boron nitride/silicon dioxide (silica) coated multiwalled carbon nanotubes (BN/SiO 2 @MWCNTs) thermally conductive network was constructed in a polyvinylidene fluoride (PVDF) matrix by electrostatic spinning technique, and subsequently the PVDF composites were prepared by hot-pressing. The synergistic effect of two-dimensional BN and one-dimensional MWCNTs in PVDF was investigated. It was found that the out-of-plane thermal conductivity of BN 30 /SiO 2 @MWCNTs composites reached 0.4693 Wm −1  K −1 , which was 209% higher than that of pure PVDF and 10% higher than that of BN/PVDF composites. The in-plane thermal conductivity of BN 30 /SiO 2 @MWCNts) composites reached 1.5642 Wm −1  K −1 , which was 1055% higher than pure PVDF and 40% higher than BN/PVDF composites. This is attributed to the synergistic effect of BN on SiO 2 @MWCNTs. Meanwhile, the volume resistivity and breakdown strength of the BN/SiO 2 @MWCNTs/PVDF composites reached 3.6 × 10 13 Ω m and 47.68 kV/mm, respectively. The results indicate that the BN 30 /SiO 2 @MWCNTs/PVDF composites have excellent thermal conductivity and electrical insulating properties, which are promising for microelectronics applications.