Solid-state solutions of copper indium disulfide and zinc indium tetrasulfide: Growth, crystallography and opto-electronic properties

• Published in: Materials science in semiconductor processing Vol. 24; pp. 231 - 236
• Main Authors: Bozhko, V.V., Novosad, A.V., Davidyuk, G.E., Kozer, V.R., Parasyuk, O.V., Vainorius, N., Sakavičius, A., Janonis, V., Kažukauskas, V.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.08.2014; Elsevier
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Copper; Cross-disciplinary physics: materials science; rheology; Crystal defects; Crystal growth; Crystal structure; DEFECTS; ELECTRICAL CONDUCTIVITY; Electron states; Electronics; Exact sciences and technology; Indium; Inorganic solid solutions; LATTICE DEFECTS; Materials science; Methods of crystal growth; physics of crystal growth; Methods of electronic structure calculations; Optoelectronic devices; Photoelectrical properties; Physics; Resistivity; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SEMICONDUCTORS; SINGLE CRYSTALS; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; SULFIDES; Trapping; VACANCIES; Zinc; Crystal growth; Photoelectrical properties; Semiconductors; Inorganic solid solutions; Crystal structure; Defects; Electrical conductivity; N type conductivity; X ray analysis; Solid solution; Crystallography; Shallow level; Optoelectronic device; Defect; Copper; Bridgman method; Defect states; Temperature dependence; Photoconduction; Electronic properties; Semiconductor materials; Thermostimulated conduction; Vacancy; Indium; X ray diffraction; Recombination center; Single crystal; Zinc; Solid state; Trapping; Electronic structure; Photoconductivity
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2014.03.040

Copper indium disulfide–zinc indium tetrasulfide solid solutions with different contents of zinc indium tetrasulfide, ranging from 4 to 16mol% were grown by the horizontal modification of the Bridgman–Stockbarger method. Their structural properties were investigated by the X-ray analysis. Spectral dependences of their photoconductivity were analyzed at T≈30K. In the single crystals with 8–12mol% of zinc indium tetrasulfide the induced photoconduction phenomenon was observed. It could be explained by the model of three recombination and trapping centers with different capture cross sections. Indium vacancies VIn or substitutional defects CuIn are possibly the fast recombination centers; meanwhile copper vacancies VCu act as the slow recombination centers. The presence of electrically active shallow defects was confirmed by the measurements of the temperature dependences of electrical conductivity and thermally stimulated currents of these samples with n-type conductivity.