Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning
As one of the emerging neuromorphic computing devices, memristors may break through the limitation of traditional computers with a von Neumann architecture. However, the development of flexible memristors is limited by the high-temperature fabrication process, large operating voltage and non-uniform...
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Published in | Nanoscale Vol. 12; no. 16; pp. 9116 - 9123 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
England
Royal Society of Chemistry
30.04.2020
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Subjects | |
Online Access | Get full text |
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Summary: | As one of the emerging neuromorphic computing devices, memristors may break through the limitation of traditional computers with a von Neumann architecture. However, the development of flexible memristors is limited by the high-temperature fabrication process, large operating voltage and non-uniform distribution of resistance. The room-temperature process has attracted great attention due to its advantages of low thermal dissipation, low cost and excellent compatibility with flexible electronics. Here, we proposed a fully physical vapour deposition (PVD) process for fabricating a memristor without additional heat treatment. The device showed excellent resistive switching characteristics with ultralow set/reset voltages (0.48 V/−0.39 V), uniform distribution (10%/15%), stable retention characteristic, multilevel storage behavior and reliable flexibility (radius of 10 mm). With continuously modulated conductance, typical synaptic plasticities were simulated by our flexible biomemristor, including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/LTD) and learning-forgetting curve. Furthermore, the array learning behavior like that of the human brain was simulated with these trainable biomemristors. This study paves a new way for developing low-cost, wearable, neuromorphic computing electronics at room temperature and expands the applications of artificial synapse arrays.
A flexible biomemristor fabricated at room temperature with ultralow switching voltage and array learning capability. |
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Bibliography: | 10.1039/d0nr00919a Electronic supplementary information (ESI) available. See DOI ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
ISSN: | 2040-3364 2040-3372 2040-3372 |
DOI: | 10.1039/d0nr00919a |