High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method

• Published in: Materials letters Vol. 78; pp. 180 - 183
• Main Authors: Xia, Q.X., Hui, K.S., Hui, K.N., Hwang, D.H., Singh, Jai, Cho, Y.R., Lee, S.K., Zhou, W., Wan, Z.P., Ha Thuc, Chi-Nhan, Son, Y.G.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2012
• Subjects: Al-doped ZnO; ammonia; Ammonia-assisted; Arrays; Azo; Electrical properties; Electrical resistivity; Hydrothermal growth; Nanocomposites; Nanomaterials; Nanorods; Nanostructure; p-Type; temperature; Volt-ampere characteristics; zinc oxide; Hydrothermal growth; Al-doped ZnO; Ammonia-assisted; Nanorods; p-Type
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2012.03.066

High quality Al–N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10−2Ωcm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83×1018–2.28×1019cm−3, 2.19–2.86cm2/Vs, and 1.01–9.58×10−2Ωcm, respectively. The I–V measurements of the p–n junction (p-AZO:N nanorods/n-Si) showed rectifying I–V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed. [Display omitted] ► N-doped p-type AZO nanorods were first prepared by hydrothermal growth. ► AZO:N nanorods showed highest aspect ratios~60. ► p-type conductivity was achieved by ammonia-assisted hydrothermal growth. ► p–n junction (p-AZO:N/n-Si) revealed rectifying I–V characteristics.