Coalescence of Epitaxial Lateral Overgrowth-Diamond on Stripe-Patterned Nucleation on Ir/MgO(001)

The coalescence of epitaxial lateral overgrowth (ELO)-diamonds from stripe-patterned diamond nucleation formed on (001) Ir/MgO has been investigated. Scanning electron microscopy showed only continuous macro steps on the coalesced ELO-diamond layers. Cross-sectional Raman mappings for the 1332 cm -1...

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Bibliographic Details
Published inApplied physics express Vol. 4; no. 9; pp. 095502 - 095502-3
Main Authors Washiyama, Shun, Mita, Seiji, Suzuki, Kazuhiro, Sawabe, Atsuhito
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.09.2011
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Summary:The coalescence of epitaxial lateral overgrowth (ELO)-diamonds from stripe-patterned diamond nucleation formed on (001) Ir/MgO has been investigated. Scanning electron microscopy showed only continuous macro steps on the coalesced ELO-diamond layers. Cross-sectional Raman mappings for the 1332 cm -1 diamond peak revealed that ELO regions including coalescence boundaries had a lower full width at half maximum value than regions vertically grown on a nucleation layer. Continuously observed strong tensile strains in ELO regions indicated that additional defect formation to relax the lattice was suppressed even after the coalescence. These results showed that the ELO diamond process could be used to obtain high crystalline diamond films by heteroepitaxy.
Bibliography:Schematic illustration of stripe-patterned diamond NRs oriented in the $\langle 100\rangle$ and $\langle 110\rangle$ directions on the Ir substrate. SEM images of ELO diamonds grown on two different orientations of diamond NRs in $\langle 100\rangle$ and $\langle 110\rangle$ directions after growth times of 30 and 60 min: (a) $\langle 100\rangle$ oriented stripe, 30 min, (b) $\langle 100\rangle$ oriented stripe, 60 min, (c) $\langle 110\rangle$ oriented stripe, 30 min, and (d) $\langle 110\rangle$ oriented stripe, 60 min. Plan-view SEM images of ELO diamond layers grown on patterned diamond NRs for a growth time of 120 min. As-grown diamond layers on $\langle 100\rangle$ stripe and $\langle 110\rangle$ stripe are shown in (a) and (b), respectively. Dashed and solid lines indicate the coalescence boundaries and NRs, respectively. Pt-coated surface morphologies of (a) and (b) correspond to (c) and (d), respectively. A set of cross-sectional Raman mapping images with respect to the 1332 cm -1 diamond first order peak in the diamond film grown on the $\langle 100\rangle$ stripe for 120 min: (a) FWHMs and (b) peak position.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.4.095502