Skyrmionics in correlated oxides

• Published in: MRS bulletin Vol. 46; no. 11; pp. 1053 - 1062
• Main Authors: Lim, Zhi Shiuh, Jani, Hariom, Venkatesan, T., Ariando, A.
• Format: Journal Article
• Language: English
• Published: Cham Springer International Publishing 01.11.2021; Springer Nature B.V
• Subjects: Antiferromagnetism; Applied and Technical Physics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Control stability; Damping; Electric fields; Elementary excitations; Energy Materials; Ferromagnetism; Heterostructures; Hypothetical particles; Magnets; Materials Engineering; Materials Science; Motion perception; Motion stability; Multilayers; Nanotechnology; Order parameters; Oxides; Particle theory; Review Article; Topology; Oxides; Beyond-Moore Computing; Topology; Skyrmions; Antiferromagnets; Spintronics
• ISSN: 0883-7694; 1938-1425
• DOI: 10.1557/s43577-021-00227-9

While chiral magnets, metal-based magnetic multilayers, or Heusler compounds have been considered as the material workhorses in the field of skyrmionics, oxides are now emerging as promising alternatives, as they host special correlations between the spin–orbital–charge–lattice degrees of freedom and/or coupled ferroic order parameters. These interactions open new possibilities for practically exploiting skyrmionics. In this article, we review the recent advances in the observation and control of topological spin textures in various oxide systems. We start with the discovery of skyrmions and related quasiparticles in bulk and heterostructure ferromagnetic oxides. Next, we emphasize the shortcomings of implementing ferromagnetic textures, which have led to the recent explorations of ferrimagnetic and antiferromagnetic oxide counterparts, with higher Curie temperatures, stray-field immunity, low Gilbert damping, ultrafast magnetic dynamics, and/or absence of skyrmion deflection. Then, we highlight the development of novel pathways to control the stability, motion, and detection of topological textures using electric fields and currents. Finally, we present the outstanding challenges that need to be overcome to achieve all-electrical, nonvolatile, low-power oxide skyrmionic devices. Graphical abstract