High-Performance Indium-Gallium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

• Published in: IEEE transactions on electron devices Vol. 58; no. 5; pp. 1452 - 1455
• Main Authors: Lan, Linfeng, Peng, Junbiao
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum oxide; Anodic hbox{Al}_{2}\hbox{O}_{3}; Applied sciences; Contact resistance; Dielectrics; Electronics; Exact sciences and technology; indium-gallium-zinc oxide (IGZO); Logic gates; oxide semiconductors; Resistance; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thin film transistors; thin-film transistors (TFTs); Transistors; Aluminium oxide; Voltage threshold; High performance; Anodic Al; indium-gallium-zinc oxide (IGZO); Oxide layer; Gallium oxide; Active layer; Contact resistance; Indium oxide; IV-VI compound; O; thin-film transistors (TFTs); oxide semiconductors; III-VI compound; Silicon oxides; Zinc oxide; Leakage current; High k dielectric; Thin film transistor; Anodic oxide; Alumina
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2011.2115248

Thin-film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) active layer and anodic aluminum oxide (Al 2 O 3 ) gate dielectric were investigated. The anodic Al 2 O 3 gate dielectric possesses low leakage current and relatively high dielectric constant. The IGZO TFT based on anodic Al 2 O 3 shows a mobility of as high as 21.6 cm 2 /V·s, an on/off current ratio of as high as 10 8 , and a threshold voltage of only 2 V. Further studies show that the anodic Al 2 O 3 gate dielectric is very compatible with the IGZO semiconductor, and both the channel resistance and contact resistance are lower than those of the TFTs based on thermally grown SiO 2 gate dielectric.