Lasing properties of PbSnTe/PbTe double hetero mid-infrared laser diodes grown by temperature difference method under controlled vapor pressure liquid-phase epitaxy

• Published in: Materials science in semiconductor processing Vol. 27; pp. 159 - 162
• Main Authors: Yasuda, Arata, Suto, Ken, Nishizawa, Jun-ichi
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.11.2014; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Crystal growth; Devices; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Infrared devices; Intermetallics; IV–VI compounds; Laser diodes; Lasers; Lasing; Lead base alloys; Lead tellurides; Liquid phase epitaxy; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Optics; Physics; Semiconductor lasers; laser diodes; Semiconductor materials; Semiconductors; Vapor phase epitaxy; growth from vapor phase; Wavelengths; Crystal growth; IV–VI compounds; Liquid phase epitaxy; Semiconductor materials; Laser diodes; Infrared devices; LPE; Stoichiometry; Vapor pressure; Threshold current; Time division multiplexing; VPE; Mid infrared radiation; IV-VI compound; Frequency shift; Microelectronic fabrication; Spontaneous emission; Slow cooling; IV-VI compounds; Current density; TDS; Active layer; Mass spectroscopy; Injection laser; Cryogenic temperature; Standards; Temperature difference; Lead tellurides; Quantity ratio; Infrared laser
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2014.06.041

PbSnTe/PbTe double hetero-diode structures were grown by temperature difference method under controlled vapor pressure (TDM–CVP) liquid-phase epitaxy (LPE). These laser diode (LD) structures were of the PbTe (Bi)/Pb1−xSnxTe/PbTe (undoped substrate) double hetero (DH) type. The peak shift of the wavelength emitted by the fabricated diodes was recorded and it was found that they successfully lased from 15K to over 77K (liquid nitrogen temperature) at a slightly lower threshold current density than standard LPEs fabricated via the slow-cooling method. In addition, the lasing peak wavelength was longer than spontaneous emissions. The laser spectra of diodes with varying Sn concentrations (x) in the active layer were observed, and their intensities were recorded as a function of the wavelength. Very sharp lasing spectra were obtained between 6.5μm and 9.4μm (x=0–0.11), clarifying that the stoichiometry control possible with TDM–CVP is suitable for fabricating optical devices. In addition, it was demonstrated that TDM–CVP is appropriate for fabricating infrared optical devices constructed from PbxSn1−xTe systems.