On the partial differential equations of electrostatic MEMS devices III: Refined touchdown behavior

• Published in: Journal of Differential Equations Vol. 244; no. 9; pp. 2277 - 2309
• Main Author: Guo, Yujin
• Format: Journal Article
• Language: English
• Published: Elsevier Inc 01.05.2008
• Subjects: MEMS; Pull-in voltage; Quenching profiles; Self-similar; Self-similar; MEMS; Pull-in voltage; Quenching profiles
• ISSN: 0022-0396; 1090-2732
• DOI: 10.1016/j.jde.2008.02.005

This paper is a continuation of [N. Ghoussoub, Y. Guo, On the partial differential equations of electrostatic MEMS devices: Stationary case, SIAM J. Math. Anal. 38 (2007) 1423–1449] and [N. Ghoussoub, Y. Guo, On the partial differential equations of electrostatic MEMS devices II: Dynamic case, NoDEA Nonlinear Differential Equations Appl. (2008), in press], where we analyzed nonlinear parabolic problem u t = Δ u − λ f ( x ) ( 1 + u ) 2 on a bounded domain Ω of R N with Dirichlet boundary conditions. This equation models a simple electrostatic Micro-Electromechanical System (MEMS) device consisting of a thin dielectric elastic membrane with boundary supported at 0 above a rigid ground plate located at −1. Here u is modeled to describe dynamic deflection of the elastic membrane. When a voltage—represented here by λ—is applied, the membrane deflects towards the ground plate and a snap-through (touchdown) must occur when it exceeds a certain critical value λ ∗ (pull-in voltage), creating a so-called “pull-in instability” which greatly affects the design of many devices. In an effort to achieve better MEMS design, the material properties of the membrane can be technologically fabricated with a spatially varying dielectric permittivity profile f ( x ) . In this work, some a priori estimates of touchdown behavior are established, based on which the refined touchdown profiles are obtained by adapting self-similar method and center manifold analysis. Applying various analytical and numerical techniques, some properties of touchdown set—such as compactness, location and shape—are also discussed for different classes of varying permittivity profiles.