Integration of silicon nitride waveguide in Ge-on-insulator substrates for monolithic solutions in optoelectronics

This work presents a novel process to manufacture advanced Germanium-On-Insulator with integrated Silicon Nitride (GOIN) stripes as light waveguide for Ge photonic devices. Through the integration of GOIN stripes, larger tensile strain could be imposed to the bonded Ge layer which may could be used...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 32; no. 5; pp. 6133 - 6140
Main Authors Xiong, Wenjuan, Wang, Guilei, Du, Yong, Lin, Hongxiao, Zhao, Xuewei, Yu, Jiahan, Kong, Zhenzhen, Dong, Yan, Jiang, Haojie, Tao, Yang, Li, Junfeng, Wang, Wenwu, Radamson, Henry H.
Format Journal Article
LanguageEnglish
Published New York Springer US 01.03.2021
Springer Nature B.V
Subjects
Characterization and Evaluation of Materials
Chemistry and Materials Science
Germanium
Materials Science
Optical and Electronic Materials
Optoelectronics
Photonics
Short wave radiation
Silicon nitride
Tensile strain
Transistors
Waveguides
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Summary:This work presents a novel process to manufacture advanced Germanium-On-Insulator with integrated Silicon Nitride (GOIN) stripes as light waveguide for Ge photonic devices. Through the integration of GOIN stripes, larger tensile strain could be imposed to the bonded Ge layer which may could be used to tailor the bandgap of Ge material for short wave length infrared application. The successful fabrication of advanced GOIN substrate makes the opportunity for monolithic integration of high-performance Ge-based high mobility transistors with photonic components where silicon nitride is the waveguide with low optical loss.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-05331-9