High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

AlGaN-channel high-electron-mobility transistor (HEMT) with high Al composition of 0.51 has been developed. The epitaxial layers were grown on a free-standing AlN substrate to improve crystalline quality. The fabricated device exhibited a maximum drain current ($I_{\text{dsmax}}$) of 25.2 mA/mm with...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 3; no. 12; pp. 121003 - 121003-3
Main Authors Tokuda, Hirokuni, Hatano, Maiko, Yafune, Norimasa, Hashimoto, Shin, Akita, Katsushi, Yamamoto, Yoshiyuki, Kuzuhara, Masaaki
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.12.2010
Online AccessGet full text

Cover

More Information
Summary:AlGaN-channel high-electron-mobility transistor (HEMT) with high Al composition of 0.51 has been developed. The epitaxial layers were grown on a free-standing AlN substrate to improve crystalline quality. The fabricated device exhibited a maximum drain current ($I_{\text{dsmax}}$) of 25.2 mA/mm with a maximum transconductance ($g_{\text{mmax}}$) of 4.7 mS/mm. The characteristic features of the device were a high source-to-drain breakdown voltage of 1800 V and a high applicable gate-to-source voltage of 4 V in the forward direction. Temperature dependence of DC characteristics demonstrated that the drain current degradation at elevated temperatures for the AlGaN-channel HEMT was appreciably small as compared with the conventional AlGaN/GaN HEMT. This is the first report showing successful DC operation of AlGaN-channel HEMT with high Al composition of over 0.5.
Bibliography:Schematic cross-sectional view of fabricated AlGaN-channel HEMT. DC characteristics of fabricated AlGaN-channel HEMT. $V_{\text{gs}}$ is varied from 4 to $-6$ V with 1 V step. Dimensions of the device are $L_{\text{g}} = 9$, $L_{\text{sg}} = 3$, and $L_{\text{gd}} = 10$ μm. Source-to-drain breakdown voltage as a function of gate-to-drain distance. Temperature dependence of drain saturation current. The current is normalized at room temperature. Square and circle symbols are obtained from the developed AlGaN-channel and conventional GaN-channel HEMT, respectively.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.3.121003