Effect of annealing on physical properties of CBD synthesized nanocrystalline FeSe thin films

• Published in: Materials science in semiconductor processing Vol. 27; pp. 280 - 287
• Main Authors: Ubale, Ashok U., Welekar, Naina R., Mitkari, Amruta V.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.11.2014; Elsevier
• Subjects: Annealing; Applied sciences; Chalcogenides; Chemical synthesis; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Heat treatment; Materials science; Materials synthesis; materials processing; Metals. Metallurgy; Nanocrystals; Oxalic acid; Physical properties; Physics; Production techniques; Semiconductors; Sodium; Thin film; Thin films; Treatment of materials and its effects on microstructure and properties; Chalcogenides; Annealing; Chemical synthesis; Thin film; Electrical conductivity; Semiconductor materials; Annealing temperature; Crystallinity; X ray diffraction; Physical properties; Thermoelectric effect; Thickness; Energy gap; Sodium; Granular material; Size effect; Electric resistivity; P type conductivity; Nanocrystal
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2014.06.035

Nanocrystalline FeSe thin films were successfully prepared by solution growth method using ferric chloride and sodium selenosulphate as cationic and anionic precursors along with complexing agent oxalic acid. The thickness dependent physical properties of FeSe thin films prepared by varying deposition time are discussed. The FeSe films of thickness 161nm were further annealed to investigate its impact on physical properties. The X-ray diffraction studies showed that, as deposited FeSe films are nano crystalline in nature and their crystallinity increases with thickness as well as with annealing temperature. The morphological studies showed that FeSe exhibits granular surface with channel like features at higher thickness. The electrical resistivity and thermo-emf measurements confirmed that, FeSe films are semiconducting in nature with P-type conductivity. The activation and band gap energies of FeSe films are found dependent on film thickness as well as on annealing temperature.