Formation of Ni silicide from atomic layer deposited Ni

• Published in: Current applied physics Vol. 16; no. 7; pp. 720 - 725
• Main Authors: Yoon, Jaehong, Kim, Soo Hyeon, Kim, Hangil, Kim, Soo-Hyun, Kim, Hyungjun, Lee, Han-Bo-Ram
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2016; 한국물리학회
• Subjects: Atomic layer deposition; Diffusion; Electron microscopy; Formations; Interlayers; Intermetallics; Nanostructure; Nanostructures; Nickel; Phase transitions; Silicides; Silicon substrates; Vapor deposition; 물리학; Vapor deposition; Nanostructures; Diffusion; Electron microscopy; Phase transitions
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2016.04.005

The silicidation of Ni deposited by plasma-enhanced atomic layer deposition with NH3 plasma and thermal atomic layer deposition using NH3 gas were comparatively studied. A SiNx interlayer was formed between the Ni deposited by plasma-enhanced atomic layer deposition and the Si substrate due to the direct exposure of the substrate to plasma, while no interlayer was observed when using thermal atomic layer deposition. In the plasma-enhanced atomic layer deposition, the diffusion of Ni was suppressed by the SiNx interlayer, so no Ni2Si phase was formed and its formation temperature increased. Ni formed by thermal atomic layer deposition showed sequential phase transformations to Ni2Si, NiSi, and NiSi2 with increased annealing temperatures. In the nanosized contact holes, a large amount of NiSi2 was formed due to the limited supply of Ni. These results provide important information for the fabrication of silicide in nanoscale 3D devices. •The silicidation of Ni prepared using PE- and thermal ALD using NH3 plasma and gas.•Phase transformation of Ni silicide is different between PE- and thermal ALD Ni.•The topographical limits of the nanostructure affect the silicide formation.