Synthesis of wurtzite GaN thin film via spin coating method

• Published in: Materials science in semiconductor processing Vol. 17; pp. 63 - 66
• Main Authors: Fong, C.Y., Ng, S.S., Yam, F.K., Hassan, H. Abu, Hassan, Z.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.01.2014; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition; Diethanolamines; Exact sciences and technology; FTIR; Gallium nitride; Gallium nitrides; Lattice dynamics; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Materials synthesis; materials processing; Methods of deposition of films and coatings; film growth and epitaxy; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Phonon states and bands, normal modes, and phonon dispersion; Phonons and vibrations in crystal lattices; Physics; Semiconductors; Silicon substrates; Sol–gel preparation; Spin coating; Thin films; Wurtzite; Sol–gel preparation; Wurtzite; Gallium nitride; Spin coating; FTIR; Sol-gel preparation; Atomic force microscopy; XRD; Deposition process; Thin films; Vibrations; Cracks; Reflection spectrum; Phonon mode; Silicon; Fourier-transformed infrared spectrometry; Sol-gel process; Scanning electron microscopy; Ethanol; Binary compounds; Infrared spectra; Preferred orientation; III-V compound; High-resolution methods; Crystalline material; Hexagonal lattices; Spin-on coatings; Wurtzite structure; Spin-on coating
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2013.08.013

In this research, hexagonal wurtzite structure gallium nitride (GaN) thin film was grown on silicon (Si) substrate by using spin coating deposition method. Simple ethanol-based precursor with the addition of diethanolamine solution was used. High resolution X-ray diffraction results revealed that wurtzite structure GaN thin film with (002) preferred orientation was deposited on Si substrate. Flied-emission scanning electron microscopy and atomic force microscopy results showed that crack free GaN thin film with uniform and dense grains of GaN was formed. Finally, lattice vibrational characterization by p-polarized infrared reflectance technique revealed a strong reststrahlen feature of crystalline wurtzite GaN, and the transverse and longitudinal phonon modes of wurtzite GaN were clearly identified.