High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates

This article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of $4\times 10^{16}$ cm -3 , while ZnO:N shows n-type conduction. The photolumines...

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Bibliographic Details
Published inApplied physics express Vol. 3; no. 3; pp. 031103 - 031103-3
Main Authors Park, Seunghwan, Minegishi, Tsutomu, Oh, Dongcheol, Lee, Hyunjae, Taishi, Toshinori, Park, Jinsub, Jung, Mina, Chang, Jiho, Im, Inho, Ha, Junseok, Hong, Soonku, Yonenaga, Ichiro, Chikyow, Toyohiro, Yao, Takafumi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2010
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Summary:This article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of $4\times 10^{16}$ cm -3 , while ZnO:N shows n-type conduction. The photoluminescence of ZnO:N shows broad bound exciton emission lines. Meanwhile, ZnO:[N+Te] layers show dominant A 0 X emission line at 3.359 eV, with a linewidth as narrow as 1.2 meV. Its X-ray linewidth shows narrower line width of 30 arcsec. Detailed investigation of photoluminescence properties of (N+Te) codoped ZnO layers suggest that the binding energy of N acceptors lies in a range of 121--157 meV.
Bibliography:Carrier concentration and conductivity type of ZnO layers against Te flux for 0--0.06 $Å$/s. Open circle ( ) shows undoped ZnO, while closed circles ( ) show N-doped ZnO. The insets show the magnetic field dependence of Hall voltages of (a) u-ZnO (sample A) and (b) ZnO:[N+Te] (sample C). The magnetic field is varied for $-3.5$ to +3.5 kG. 10 K photoluminescence spectra of the near band emission lines of u-ZnO (sample A), ZnO:N (sample B) and ZnO:[N+Te] (sample C) films. Temperature-dependence of the PL spectrum of ZnO:[N+Te] (sample C) grown with Te flux of 0.03 $Å$/s in the temperature range of 10 K to RT.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.3.031103