Growth and application of Sb0.5Mo0.5Se2 ternary alloy as photodetector

• Published in: Materials letters. X Vol. 2; p. 100013
• Main Authors: Dixit, Vijay, Chauhan, Payal, Patel, Alkesh B., Narayan, Som, Jha, P.K., Solanki, G.K., Patel, K.D., Pathak, V.M.
• Format: Journal Article
• Language: English
• Published: Elsevier 01.06.2019
• ISSN: 2590-1508; 2590-1508
• DOI: 10.1016/j.mlblux.2019.100013

Presently, ternary alloy engineering holds ability in promoting high performance photo detecting devices. In the present investigation, we have employed direct vapor transport technique (DVT) to grow Sb0.5Mo0.5Se2 multilayer crystal for its use as photodetector. To confirm the composition of the grown crystals, energy dispersive analysis of x-ray (EDAX) is performed. To explore the morphological properties, optical microscopy and scanning electron microscopy (SEM) are used and the growth from vapor phase that is initiated due to screw dislocation is observed. The phase composition and optical properties of the as grown crystals are examined by transmission electron microscopy (TEM) and UV–Visible spectroscopy providing indirect energy band gap of 1.22 eV. Raman spectra of both pure MoSe2 and Sb0.5Mo0.5Se2 show the presence of the out of plane A1g vibrational mode at 243 cm−1. In addition, to study photo conduction property, the mechanically exfoliated crystal was illuminated by polychromatic source having intensity of 50 mWcm−2 at different bias voltages. Keywords: DVT, Crystal growth, Sb0.5Mo0.5Se2, SEM, SAED, Raman, Photo current, Responsivity and detectivity