Modeling of magneto-conductivity of bismuth selenide: a topological insulator

• Published in: SN applied sciences Vol. 3; no. 4; p. 413
• Main Authors: Kumar, Yogesh, Sultana, Rabia, Sharma, Prince, Awana, V. P. S.
• Format: Journal Article
• Language: English
• Published: Cham Springer International Publishing 01.04.2021; Springer Nature B.V
• Subjects: 5. Physics (general); Applied and Technical Physics; Bismuth; Chemistry/Food Science; Conductivity; Crystal growth; Crystals; Earth Sciences; Engineering; Environment; Localization; Magnetic fields; Magnetoresistance; Magnetoresistivity; Materials Science; Radiation; Raman spectroscopy; Research Article; Scanning electron microscopy; Selenide; Single crystals; Spectrum analysis; Temperature; Thin films; Topological insulators; X-ray diffraction; Topological insulator; Quantum scattering; Magneto-conductivity; Bulk carriers; Surface conductivity; Single crystal
• ISSN: 2523-3963; 2523-3971
• DOI: 10.1007/s42452-021-04397-8

We report the magneto-conductivity analysis of Bi 2 Se 3 single crystal at different temperatures in a magnetic field range of ± 14 T. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR%) of around 380% at a magnetic field of 14 T and a temperature of 5 K. The Hikami–Larkin–Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 T, suggesting that the role of surface-driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers-driven classical terms. The model successfully explains the MC of the Bi 2 Se 3 single crystal at various temperatures (5–200 K) and applied magnetic fields (up to 14 T).