An X‐band high‐efficiency GaN load modulated balanced amplifier MMIC

An X‐band high‐efficiency GaN load modulated balanced amplifier monolithic microwave integrated circuit (MMIC) composed of 90° Lange Couplers at radio frequency (RF) input and output, a pair of balanced power amplifier (BPA) and a control signal (CS) PA is presented in this article. The impedance of...

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Bibliographic Details
Published inMicrowave and optical technology letters Vol. 62; no. 6; pp. 2195 - 2201
Main Authors Wang, Guangnian, Tao, Hong‐Qi
Format Journal Article
LanguageEnglish
Published Hoboken, USA John Wiley & Sons, Inc 01.06.2020
Wiley Subscription Services, Inc
Subjects
amplitude control
Continuous radiation
Efficiency
GaN
high‐efficiency
Integrated circuits
LMBA
MMIC
MMIC (circuits)
phase control
Power amplifiers
Push-pull amplifiers
Radio frequency
X‐band
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Summary:An X‐band high‐efficiency GaN load modulated balanced amplifier monolithic microwave integrated circuit (MMIC) composed of 90° Lange Couplers at radio frequency (RF) input and output, a pair of balanced power amplifier (BPA) and a control signal (CS) PA is presented in this article. The impedance of the BPA is modulated by varying the amplitude and phase of the injected CS at same frequency. The prototype has a peak continuous wave output power of 42.5 dBm, with efficiency of 45% to 55% at peak power and 40% to 45% at 6 dB output back‐off over 8 to 11 GHz. The average efficiency for the 37.2 dBm output power is 40%, with adjacent channel leakage ratio of −32 dBc without digital predistortion at 10 GHz center frequency.
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.32309