rGO decorated W doped BiVO4 novel material for sensing detection of trimethylamine

[Display omitted] The novel gas sensing material of rGO decorated W-doped bismuth vanadate was synthesized for the first time by metal organic decomposition followed by hydrothermal treatment. The sensing properties of the 6BiVO4/rGO5 composite to triethylamine exhibit significant enhancement compar...

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Published inSensors and actuators. B, Chemical Vol. 298; p. 126749
Main Authors Sun, Lixia, Sun, Jianhua, Han, Ning, Liao, Dankui, Bai, Shouli, Yang, Xiaojun, Luo, Ruixian, Li, Dianqing, Chen, Aifan
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.11.2019
Elsevier Science Ltd
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Summary:[Display omitted] The novel gas sensing material of rGO decorated W-doped bismuth vanadate was synthesized for the first time by metal organic decomposition followed by hydrothermal treatment. The sensing properties of the 6BiVO4/rGO5 composite to triethylamine exhibit significant enhancement compared with pristine BiVO4, which is attributed to the formation of p-n heterojunction and the performance of rGO. •The rGO decorated 6W:BiVO4 gas sensing material was synthesized for the first time.•The structure, morphology and gas sensing properties of material were investigated.•The optimum composite exhibits excellent sensing properties towards trimethylamine.•The enhancement is attributed to formation of heterojunction and rGO performance. The development of new materials forever is research front for various application fields, otherwise becomes making bricks without straw. A novel sensing material of rGO decorated W-doped BiVO4 was synthesized for the first time by metal organic decomposition combined with hydrothermal methods for detection of trimethylamine (TEA) vapor. The structure and morphology of material were characterized by spectroscopy techniques. The sensing properties of sensor to TEA were measured. The results showed that the 6WBiVO4/rGO5 composite exhibits response of 12.8 and response time of 16 s, which is 5.12 times higher and 2.75 times lower than that of BiVO4, respectively. Moreover, the sensor shows excellent selectivity and stability to 20 ppm TEA at 135 °C. The enhancement is ascribed to the increase of electron density, enhancement of specific surface and accelerating of electron transfer for BiVO4 due to W doping, rGO decoration and formation of heterojunctions.
ISSN:0925-4005
1873-3077
DOI:10.1016/j.snb.2019.126749