Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

• Published in: Applied physics letters Vol. 110; no. 6
• Main Authors: Yan, Xin, Wei, Wei, Tang, Fengling, Wang, Xi, Li, Luying, Zhang, Xia, Ren, Xiaomin
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 06.02.2017
• Subjects: Aluminum gallium arsenides; Applied physics; Emitters; Gallium arsenide; Gold; Heterostructures; Infrared lasers; Lasing; Metalorganic chemical vapor deposition; Nanowires; Organic chemicals; Organic chemistry; Q factors; Quantum wells; Room temperature; Temperature dependence

Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed...