Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed...

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Bibliographic Details
Published inApplied physics letters Vol. 110; no. 6
Main Authors Yan, Xin, Wei, Wei, Tang, Fengling, Wang, Xi, Li, Luying, Zhang, Xia, Ren, Xiaomin
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 06.02.2017
Subjects
Aluminum gallium arsenides
Applied physics
Emitters
Gallium arsenide
Gold
Heterostructures
Infrared lasers
Lasing
Metalorganic chemical vapor deposition
Nanowires
Organic chemicals
Organic chemistry
Q factors
Quantum wells
Room temperature
Temperature dependence
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Summary:Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature dependent wavelength shift of 0.045 nm/K. This work paves the way towards ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers.
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4975780