The optical properties of few-layer InSe

• Published in: Journal of applied physics Vol. 128; no. 6
• Main Authors: Song, Chaoyu, Huang, Shenyang, Wang, Chong, Luo, Jiaming, Yan, Hugen
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 14.08.2020
• Subjects: Applied physics; Carrier mobility; Energy gap; Heterostructures; Near infrared radiation; Optical properties; Optoelectronics; Polarized light; Room temperature; Two dimensional materials
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/5.0018480

Few-layer InSe draws tremendous research interests owing to the superior electronic and optical properties. It exhibits a high carrier mobility up to more than 1000 cm2/Vs at room temperature. The strongly layer-tunable bandgap spans a large spectral range from near-infrared to the visible. In this perspective, we systematically review the optical properties of few-layer InSe. First, the intrinsic optical and electronic properties are introduced. Compared to other two-dimensional materials, the light–matter interaction of few-layer InSe is unusual. The bandgap transition is inactive or extremely weak for in-plane polarized light, and the emission light is mainly polarized along the out-of-plane direction. Second, we will present several schemes to tune the optical properties of few-layer InSe such as external strain, surface chemical doping, and van der Waals interfacing. Third, we survey the applications of few-layer InSe in photodetection and heterostructures. Overall, few-layer InSe exhibits great potentials not only in fundamental research but also in electronic and optoelectronic applications.