Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure

The parameters of pulsed blue-violet ( at ) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was and the minimum threshold electron beam current density...

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Published inQuantum electronics (Woodbury, N.Y.) Vol. 45; no. 7; pp. 601 - 603
Main Authors Gamov, N.A., Zhdanova, E.V., Zverev, M.M., Peregoudov, D.V., Studenov, V.B., Mazalov, A.V., Kureshov, V.A., Sabitov, D.R., Padalitsa, A.A., Marmalyuk, A.A.
Format Journal Article
LanguageEnglish
Published United States Turpion Ltd and the Russian Academy of Sciences 01.01.2015
Subjects
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ALUMINIUM NITRIDES
Aluminum gallium nitrides
Asymptotic properties
BEAM CURRENTS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
ELECTRON BEAM PUMPING
ELECTRON BEAMS
Electron energy
electron-beam-pumped laser
GALLIUM NITRIDES
Indium gallium nitrides
INDIUM NITRIDES
KEV RANGE
LASERS
Quantum electronics
quantum well
QUANTUM WELLS
quantum-well structure
TEMPERATURE RANGE 0273-0400 K
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Summary:The parameters of pulsed blue-violet ( at ) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was and the minimum threshold electron beam current density was at an electron energy of .
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2015v045n07ABEH015780