Surface cleaning of Si(100) and Ag/Si(100): Characterisation by SEM, AES and RHEED

The study of surface reactivity, such as the nucleation and growth of crystals, requires both chemically clean and atomically perfect surfaces. This work describes the use of an ultra-high vacuum SEM, equipped with AES and RHEED to study the cleaning procedures of various types of Si(100) wafers, bo...

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Bibliographic Details
Published inSurface science Vol. 137; no. 2; pp. L92 - L96
Main Authors Hanbücken, M., Neddermeyer, H., Venables, J.A.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.01.1984
Amsterdam Elsevier Science
New York, NY
Subjects
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Metals, semimetals and alloys
Metals. Metallurgy
Physics
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
Specific materials
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Surface cleaning
Scanning electron microscopy
Annealing
Heat treatment
Cleanness
Epitaxy
Temperature effect
Ion beam
Surface film
Vacuum treatment
Surface structure
Diffraction LEED
Etch pit
Metrology
LEED diffraction
Auger electron spectrometry
Island structure
Non metal
Reflection high energy electron diffraction
Cleaning
Silicon
Experimental study
Surface treatment
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Summary:The study of surface reactivity, such as the nucleation and growth of crystals, requires both chemically clean and atomically perfect surfaces. This work describes the use of an ultra-high vacuum SEM, equipped with AES and RHEED to study the cleaning procedures of various types of Si(100) wafers, both prior to, and after Ag deposition. It was found that most frequently applied cleaning methods lead to structural imperfections in the form of etch pits. Repeated deposition and desorption of Ag greatly enhances the rate of formation of such pits. The pits themselves are not always detectable by AES or LEED/RHEED, but can be seen from the early stages by SEM. These undesirable effects can be greatly reduced by the use of autoepitaxial Si(100) wafers. The cleaning procedure for these wafers is described and discussed.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(84)90513-2