High-Power Quantum-Dot Superluminescent Diodes With p-Doped Active Region

We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 18; no. 18; pp. 1946 - 1948
Main Authors Rossetti, M., Li, L., Fiore, A., Occhi, L., Velez, C., Mikhrin, S., Kovsh, A.
Format Journal Article
LanguageEnglish
Published New York IEEE 15.09.2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Doping
Gain
Gain measurement
Gallium arsenide
optical coherence tomography (OCT)
Optical sensors
p-doping
Photonics
Power generation
quantum dot (QD)
Quantum dots
Stability
superluminescent diode
Superluminescent diodes
Temperature
temperature characteristics
Tomography
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Summary:We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability
Bibliography:ObjectType-Article-1
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ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.882303