Low-energy electron-enhanced etching of HgCdTe

• Published in: Journal of electronic materials Vol. 32; no. 7; pp. 677 - 685
• Main Authors: JAEHWA KIM, KOGA, T. S, GILLIS, H. P, GOORSKY, Mark S, GARWOOD, Gerald A, VARESI, John B, RHIGER, David R, JOHNSON, Scott M
• Format: Conference Proceeding Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.07.2003; Springer Nature B.V
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Lithography, masks and pattern transfer; Materials science; Microelectronic fabrication (materials and surfaces technology); Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface cleaning, etching, patterning; Surface treatments; Patterning; Anisotropic etching; Roughness; Electron beam; Etching; Epitaxial film; Experimental study; Surface treatment; Inorganic compound; Low energy; Microelectronic fabrication; low-energy electron-enhanced etching (LE4); Transition metal compounds; II-VI semiconductors; Cadmium tellurides; Plasma etching; Molecular beam epitaxy; Mercury tellurides; CH4/H2/N2/Ar; HgCdTe; MESA technology; Photoresist
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-003-0052-z

Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy) and gas composition (CH4 concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and polymer deposition. 15 refs.