Dynamic saturation in Semiconductor Optical Amplifiers: accurate model, role of carrier density, and slow light

We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting pa...

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Bibliographic Details
Published inOptics express Vol. 18; no. 2; pp. 685 - 693
Main Authors Berger, Perrine, Alouini, Mehdi, Bourderionnet, Jérôme, Bretenaker, Fabien, Dolfi, Daniel
Format Journal Article
LanguageEnglish
Published United States Optical Society of America - OSA Publishing 18.01.2010
Subjects
Amplifiers, Electronic
Computer Simulation
Computer-Aided Design
Equipment Design
Equipment Failure Analysis
Models, Theoretical
Optical Devices
Optics
Physics
Reproducibility of Results
Semiconductors
Sensitivity and Specificity
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Summary:We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.18.000685