Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

• Published in: Materials letters Vol. 65; no. 5; pp. 911 - 914
• Main Authors: Muzykov, Peter G., Krishna, Ramesh, Das, Sandip, Hayes, Timothy, Sudarshan, Tangali S., Mandal, Krishna C.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.03.2011
• Subjects: Chemical etching; Crystals; detectors; Dislocations; EBIC; Electron beam induced current; KOH etching; Leakage current; potassium hydroxide; Screw dislocations; Semi-insulating; silicon; Silicon carbide; Single crystals; KOH etching; Silicon carbide; Semi-insulating; EBIC; Electron beam induced current; Dislocations

In this work we demonstrate the electron beam induced current (EBIC) contrast of dislocations in semi-insulating (SI) bulk SiC single crystals. Our investigations revealed that the screw dislocations produce dark EBIC contrast indicating high leakage current in the defective regions. This type of sc...