Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

In this work we demonstrate the electron beam induced current (EBIC) contrast of dislocations in semi-insulating (SI) bulk SiC single crystals. Our investigations revealed that the screw dislocations produce dark EBIC contrast indicating high leakage current in the defective regions. This type of sc...

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Bibliographic Details
Published inMaterials letters Vol. 65; no. 5; pp. 911 - 914
Main Authors Muzykov, Peter G., Krishna, Ramesh, Das, Sandip, Hayes, Timothy, Sudarshan, Tangali S., Mandal, Krishna C.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.03.2011
Subjects
Chemical etching
Crystals
detectors
Dislocations
EBIC
Electron beam induced current
KOH etching
Leakage current
potassium hydroxide
Screw dislocations
Semi-insulating
silicon
Silicon carbide
Single crystals
KOH etching
Silicon carbide
Semi-insulating
EBIC
Electron beam induced current
Dislocations
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Summary:In this work we demonstrate the electron beam induced current (EBIC) contrast of dislocations in semi-insulating (SI) bulk SiC single crystals. Our investigations revealed that the screw dislocations produce dark EBIC contrast indicating high leakage current in the defective regions. This type of screw dislocations are harmful for high resolution radiation detectors and should be eliminated by improving the crystal qualities. Chemical etching in molten KOH was used for dislocation mapping in the test structures and to correlate EBIC contrast with dislocations. The EBIC contrast found in our study in SI SiC is discussed.
Bibliography:http://dx.doi.org/10.1016/j.matlet.2010.11.074
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2010.11.074