Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications
We report on novel ferroelectric thin film compositions for use in non-volatile memory storage and biomedical tactile sensor applications. The lead zirconate titanate (PZT) composition was modified by lanthanum (La 3+) (PLZT) and vanadium (V 5+) (PZTV, PLZTV) doping. Hybrid films with PZTV and PLZTV...
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Published in | Thin solid films Vol. 518; no. 24; pp. e152 - e155 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.10.2010
|
Subjects | |
Online Access | Get full text |
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Summary: | We report on novel ferroelectric thin film compositions for use in non-volatile memory storage and biomedical tactile sensor applications. The lead zirconate titanate (PZT) composition was modified by lanthanum (La
3+) (PLZT) and vanadium (V
5+) (PZTV, PLZTV) doping. Hybrid films with PZTV and PLZTV as top layers are also made using seed layers of differing compositions using sol–gel and spin coating methods. La
3+ doping decreased the coercive field, polarization and leakage current, while increasing the relative permittivity. V
5+ doping, while having similar effects, results in an enhanced polarization, with comparable dielectric loss characteristics. Complex doping of both La
3+ and V
5+ in PLZTV, while reducing the polarization relative to PZTV, significantly decreases the coercive field. Hybrid films have a greater uniformity of grain formation than non-hybrid films, thus decreasing the coercive field, leakage current and polarization fatigue while increasing the relative permittivity. Analysis using X-ray diffraction (XRD) verified the retention of the PZT perovskite structure in the novel films. PLZT/PZTV has been identified as an optimal ferroelectric film composition due to its desirable ferroelectric, fatigue and dielectric properties, including the highest observed remnant polarization (
P
r) of ∼
25
μC/cm
2, saturation polarization (
P
sat) of ∼
58
μC/cm
2 and low coercive field (
E
c) of ∼
60
kV/cm at an applied field of ∼
1000
kV/cm, as well as a low leakage current density of ∼
10
−
5
A/cm
2 at 500
kV/cm and fatigue resistance of up to ∼
10
10 switching cycles. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2010.03.108 |