Heterogeneously integrated III-V/silicon distributed feedback lasers

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a...

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Bibliographic Details
Published inOptics letters Vol. 38; no. 24; p. 5434
Main Authors Keyvaninia, S, Verstuyft, S, Van Landschoot, L, Lelarge, F, Duan, G-H, Messaoudene, S, Fedeli, J M, De Vries, T, Smalbrugge, B, Geluk, E J, Bolk, J, Smit, M, Morthier, G, Van Thourhout, D, Roelkens, G
Format Journal Article
LanguageEnglish
Published United States 15.12.2013
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Summary:Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.
ISSN:1539-4794
DOI:10.1364/OL.38.005434