100 nm period grating by high-index phase-mask immersion lithography

The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the...

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Published inOptics express Vol. 18; no. 10; pp. 10557 - 10566
Main Authors Bourgin, Yannick, Jourlin, Yves, Parriaux, Olivier, Talneau, Anne, Tonchev, Svetlen, Veillas, Colette, Karvinen, Petri, Passilly, Nicolas, Md Zain, Ahmad R, De La Rue, Richard M, Van Erps, Jürgen, Troadec, David
Format Journal Article
LanguageEnglish
Published United States Optical Society of America - OSA Publishing 10.05.2010
Subjects
Engineering Sciences
Equipment Design
Equipment Failure Analysis
Nanotechnology - instrumentation
Optics
Photography - instrumentation
Photonic
Refractometry - instrumentation
Diffraction gratings
Nanostructure fabrication
Subwavelength structures
Lithography
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Summary:The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.18.010557