Enhancement of output performance of Cu2ZnSnS4 thin film solar cells—A numerical simulation approach and comparison to experiments

• Published in: Physica. B, Condensed matter Vol. 407; no. 21; pp. 4391 - 4397
• Main Authors: Patel, Malkeshkumar, Ray, Abhijit
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 01.11.2012; Elsevier
• Subjects: Acceptor concentration; Applied sciences; Back metal work function (BMWF); Condensed matter; CZT; CZTS; Energy; Exact sciences and technology; Mathematical models; Natural energy; Optimization; Photovoltaic cells; Photovoltaic conversion; Simulation; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Thin film solar cell; Thin films; Back metal work function (BMWF); CZTS; Acceptor concentration; Thin film solar cell; Simulation; Voltage current curve; Charge carrier density; Thermalization; Fill factor; Thin film; Photovoltaic cell; Solar cell; Thickness; Work function; Acceptor center; Continuity equation; Copper Tin Zinc Sulfides Mixed; Equation resolution
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2012.07.042

The formation of stable, low resistance and nonrectifying contacts to Cu2ZnSnS4 (CZTS) thin film photovoltaic material are the major and critical challenges associated with its effect over the output performance of fabricated solar cells. The solution of continuity equation in one dimension for a soda lime glass substrates (SLG) |Mo | CZTS | CdS | ZnO:Al cell structure is considered in the simulation of its current–voltage characteristics that is governed by the back contact material, acceptor concentration as well as thickness of the CZTS layer. Our primary simulation shows a 6.44% efficiency of the CZTS solar cell which is comparable to reported experimental data if these parameters are not optimized. However, by optimizing them a simulated conversion efficiency as high as 13.41% (Voc=1.002V, Jsc=19.31mA/cm2, fill factor (FF)=69.35%) could be achievable. The solar cell with a back contact metal work function of 5.5eV, an absorber layer's thickness of 2.68μm and an acceptor concentration of 5×1016cm−3 were optimum. The presented optimization is ideal and subject to experimental verification with a precise control of the process parameters along with reduced surface as well as bulk recombination, secondary phases and thermalization losses.