170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon

Signal transmission experiments were performed at 170 Gbit/s in an integrated Al(2)O(3):Er(3+) waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pum...

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Bibliographic Details
Published inOptics express Vol. 17; no. 24; pp. 22201 - 22208
Main Authors Bradley, Jonathan D B, Costa e Silva, Marcia, Gay, Mathilde, Bramerie, Laurent, Driessen, Alfred, Wörhoff, Kerstin, Simon, Jean-Claude, Pollnau, Markus
Format Journal Article
LanguageEnglish
Published United States Optical Society of America - OSA Publishing 23.11.2009
Subjects
Engineering Sciences
Optics
Photonic
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Summary:Signal transmission experiments were performed at 170 Gbit/s in an integrated Al(2)O(3):Er(3+) waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 2(7)-1 bit sequence.
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.17.022201