A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions

• Published in: Japanese Journal of Applied Physics Vol. 53; no. 4S; pp. 4 - 1-04ED03-6
• Main Authors: Ohsawa, Takashi, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.04.2014
• Subjects: CMOS; Density; Devices; Electric potential; Equivalence; Hybrid circuits; Power supplies; Tunnel junctions; Voltage
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.53.04ED03

Two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions (STT-MTJs) is proposed that is smaller than the conventional ones with equivalent performance. The power supply voltage dependence of the area for the two-NFET bootstrap type selective device that can switch MTJs within 10 ns is compared with those of the conventional single-NFET, single-PFET, and CMOS type selective devices with the same performance in 90 nm technology node. It is found that the two-NFET bootstrap type selective device can be smaller than the conventional ones especially for the power supply voltage equal to or lower than 0.9 V. The two-NFET bootstrap type selective device is shown to maintain scalability to 32 nm node just like the CMOS one, while the conventional single-NFET and single-PFET selective devices fail to be scaled properly. This selective device can be applied to every high-performance MOS/MTJ hybrid circuit for increasing the integration density.