Wafer level reliability and leakage current modeling of PZT capacitors
Over the last few years, thin films of PbZr x Ti 1− x O 3 (PZT) have been the focus of extensive researches for high-k capacitor applications. However, some electrical properties such as leakage current conduction and degradation mechanisms need to be better understood. From Constant Voltage Stress...
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Published in | Materials science & engineering. B, Solid-state materials for advanced technology Vol. 118; no. 1; pp. 28 - 33 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
25.04.2005
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Subjects | |
Online Access | Get full text |
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