Wafer level reliability and leakage current modeling of PZT capacitors

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 118; no. 1; pp. 28 - 33
• Main Authors: Bouyssou, E., Jérisian, R., Cézac, N., Leduc, P., Guégan, G., Anceau, C.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 25.04.2005
• Subjects: Constant voltage stress; Electrical properties; PbZr xTi 1− xO 3; Electrical properties; Constant voltage stress; PbZr x Ti 1− x O 3

Over the last few years, thin films of PbZr x Ti 1− x O 3 (PZT) have been the focus of extensive researches for high-k capacitor applications. However, some electrical properties such as leakage current conduction and degradation mechanisms need to be better understood. From Constant Voltage Stress...