Analysis and design of a 10–20 GHz simultaneous noise and input matching low‐noise amplifier via frequency‐dependent negative feedbacks

• Published in: Electronics letters Vol. 59; no. 3
• Main Authors: He, Ding, Yuan, Yang, Li, Jiaxuan, Tan, Cheng, Yu, Zhongjun
• Format: Journal Article
• Language: English
• Published: Stevenage John Wiley & Sons, Inc 01.02.2023; Wiley
• Subjects: Amplifiers; Bandwidths; Electrostatic discharges; integrated circuit noise; Matching; microwave amplifiers; microwave integrated circuits; Noise levels; Parasitics (electronics); Transistors
• ISSN: 0013-5194; 1350-911X
• DOI: 10.1049/ell2.12733

This letter presents a novel method to implement a 10–20 GHz low‐noise amplifier (LNA) with simultaneous noise and input matching performance. That is, the Mille effect caused by the gate‐drain parasitic capacitance Cgd is eliminated by converting the succeeding‐stage impedance into the required load using frequency‐dependent negative feedbacks and a π‐type network. The corresponding analytical equation is also derived for the first time. To verify the feasibility, the circuit is fabricated via a 0.15‐μm GaAs p‐HEMT process with a compact size of 0.9×1.9 mm2. The measured results show that the proposed LNA features a peak gain of 26.1 dB, a minimum noise figure of 1.08 dB, and an input return loss of less than −15.8 dB. This letter presents a method for implementing a 10–20 GHz low‐noise amplifier with simultaneous noise and input matching performance by using a frequency‐dependent negative feedback network. The analytical equation of the required load is also derived for the first time in order to eliminate the Mille effect caused by the gate‐drain parasitic capacitance.