UV-assisted rapid thermal annealing for solution-processed zinc oxide thin-film transistors

An ultraviolet (UV)-assisted thermal annealing (TA) method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs). Conventional thermal treatment of zinc hydroxide solution, which was carried out at 150 °C for 60 min in air, produced ZnO materials....

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Bibliographic Details
Published inSemiconductor science and technology Vol. 29; no. 9; pp. 95019 - 95024
Main Authors Hwang, Jaeeun, Park, Jaehoon, Kim, Hongdoo
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2014
Subjects
oxide semiconductor
solution process
thin-film transistor
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Summary:An ultraviolet (UV)-assisted thermal annealing (TA) method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs). Conventional thermal treatment of zinc hydroxide solution, which was carried out at 150 °C for 60 min in air, produced ZnO materials. Electrical properties of the TFTs employing thermally-annealed ZnO films were reproduced in the transistors fabricated using a simultaneous thermal treatment combined with UV irradiation at 150 °C for 3 min in air. These results demonstrate that the UV-assisted TA method can expedite the decomposition of precursor materials, contributing to rapid crystallization into thin films.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/29/9/095019