A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promising properties, such as non-volatility, speed,...

Full description

Saved in:
Bibliographic Details
Published inApplied sciences Vol. 14; no. 3; p. 1229
Main Authors Zhang, Shubin, Dai, Peifang, Li, Ning, Chen, Yanbo
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.02.2024
Subjects
Anisotropy
CMOS
Hardness
Integrated circuits
ionizing radiation
magnetic tunnel junction (MTJ)
Mechanical properties
Memory (Computers)
Radiation
radiation hardening
Semiconductor chips
Simulation
single-event upset (SEU)
Technology application
Transistors
triple modular redundancy (TMR)
Online AccessGet full text

Cover

More Information
Summary:Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promising properties, such as non-volatility, speed, and unlimited endurance. One of the important merits of STT-MRAM is its radiation hardness, thanks to its core component, a magnetic tunnel junction (MTJ), being capable of good function in an irradiated environment. This property makes MRAM attractive for space and nuclear technology applications. In this paper, a novel radiation-hardened triple modular redundancy (TMR) design for anti-radiation reinforcement is proposed based on the utilization of STT-MTJ devices. Simulation results demonstrate the radiation-hardened performance of the design. This shows improvements in the design’s robustness against ionizing radiation.
ISSN:2076-3417
2076-3417
DOI:10.3390/app14031229