Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator

• Published in: IEEE transactions on nuclear science Vol. 61; no. 6; pp. 3050 - 3054
• Main Authors: Inanlou, Farzad, Lourenco, Nelson E., Fleetwood, Zachary E., Ickhyun Song, Howard, Duane C., Cardoso, Adilson, Zeinolabedinzadeh, Saeed, Zhang, Enxia, Zhang, Cher X., Paki-Amouzou, Pauline, Cressler, John D.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: BiCMOS integrated circuits; CMOS integrated circuits; Heterojunction bipolar transistors; Pulse generation; Radar; radiation effects; SiGe BiCMOS; Silicon germanium; total ionizing dose (TID)
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2014.2363160

We investigate the effects of total ionizing dose (TID) on a Gaussian pulse generator implemented in IBM's new 9HP SiGe BiCMOS platform, which combines 300 GHz fT SiGe HBTs and 90 nm CMOS. Total dose effects were examined using a 10-keV X-ray source. The effects of TID on the performance of the pulse generator were investigated with the pulse generator exhibiting a tpw variation of less than 7% for total dose of up to 3.0 Mrad. This circuit is intended for low-power autonomous high-altitude and space-based imaging radars.