Atomic-scale study of the role of carbon on boron clustering

• Published in: Thin solid films Vol. 518; no. 9; pp. 2406 - 2408
• Main Authors: Philippe, T., Duguay, S., Grob, J.J., Mathiot, D., Blavette, D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 26.02.2010; Elsevier
• Subjects: Boron; Carbon; Clustering; Condensed Matter; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in germanium and silicon; Exact sciences and technology; Laser atom probe tomography; Physics; Structure of solids and liquids; crystallography; Boron; Clustering; Carbon; Laser atom probe tomography; Ion implantation; Metastable phases; Impurity scattering; Solubility; Cluster; Carbon additions; Precursor; Atom probe; Silicon carbide; Silicon; Carbon 13
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.08.022

Boron (BF 2, 20 keV, 3.14/cm 2) and carbon (13 keV, 10 15/cm 2) implanted silicon annealed at 800 °C during 30 min or at 1000 °C during 10 s has been investigated using a laser-assisted wide-angle tomographic atom probe (LaWaTAP) instrument. Boron–silicon clusters containing ~ 1.3 at.% of boron atoms have been observed in boron implanted silicon with a concentration exceeding the solubility limit. Often identified as BICs, they are interpreted as a metastable phase. Furthermore, addition of carbon clearly reduced the clustering of boron. This was interpreted as a diminution of boron diffusion or as an increase of the solubility limit of boron. Carbon–silicon clusters containing ~ 1.5 at.% of carbon atoms were observed, maybe the precursors of the SiC phase.