An attempt to design long-wavelength (>2 μm) InP-based GaInNAs diode lasers

• Published in: Applied physics. A, Materials science & processing Vol. 108; no. 3; pp. 521 - 528
• Main Authors: Sarzała, Robert P., Piskorski, Łukasz, Szczerbiak, Paweł, Kudrawiec, Robert, Nakwaski, Włodzimierz
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer-Verlag 01.09.2012; Springer
• Subjects: Characterization and Evaluation of Materials; Condensed Matter Physics; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Lasers; Machines; Manufacturing; Nanotechnology; Optical and Electronic Materials; Optics; Physics; Physics and Astronomy; Processes; Semiconductor lasers; laser diodes; Surfaces and Interfaces; Thin Films; GaSb; Carrier Concentration; Gain Spectrum; Single Quantum Well; Valence Band Edge; Thickness; Band structure; Compressive stress; Semiconductor lasers; Strained layer; Quantum well lasers; Thermal conductivity; Effective mass; Optical amplification; Carrier density; Laser diodes; Indium phosphide
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-012-6977-4

In the present paper, anticipated performance characteristics of various InP-based GaInNAs quantum-well (QW) active regions are determined with the aid of our comprehensive computer model for various sets of parameters (temperature, carrier concentration, QW thickness). It is evident from this analysis that the compressively strained InP-based Ga 0.12 In 0.88 N 0.02 As 0.98 /Ga 0.275 In 0.725 As 0.6 P 0.4 QW structure may offer expected lasing emission. Its maximal optical gain of over 2150 cm −1 has been determined at room temperature for the wavelength of about 2815 nm for the QW thickness of 10 nm and the carrier concentration of 5×10 18  cm −3 . Therefore, the above InP-based QW structure may be successfully applied in compact semiconductor laser sources of the desired radiation of wavelengths longer at room temperature than even 2800 nm. Similar GaAs-based devices emit radiation of distinctly shorter wavelengths, whereas GaSb-based ones avail themselves of more expensive substrates as well as exhibit lower thermal conductivities and worse carrier confinements.