Thermal effects in photoemission from Bi(1 1 1) films on Si(1 1 1)-(7 × 7)

An angle-resolved photoemission study of epitaxied Bi(1 1 1) film on Si(1 1 1)-(7 × 7) surface has been carried out at a temperature from 10 K to 210 K. The results show that there exists strong temperature dependence in the valence band of Bi(1 1 1) film. The variations in the spectral intensity an...

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Bibliographic Details
Published inSurface science Vol. 602; no. 1; pp. 102 - 106
Main Authors Han, Tie-Zhu, Jia, Jin-Feng, Shen, Quan-Tong, Dong, Guo-Cai, Xue, Qi-Kun
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 2008
Amsterdam Elsevier Science
New York, NY
Subjects
Bismuth
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Indirect transition
Photoemission
Physics
Temperature dependence
Bismuth
Temperature dependence
Indirect transition
Photoemission
Silicon
Temperature effects
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Summary:An angle-resolved photoemission study of epitaxied Bi(1 1 1) film on Si(1 1 1)-(7 × 7) surface has been carried out at a temperature from 10 K to 210 K. The results show that there exists strong temperature dependence in the valence band of Bi(1 1 1) film. The variations in the spectral intensity and shape indicate the importance of phonon-assisted indirect transition in the photoemission process. The thermal sensitivity coefficients and effective Debye temperatures for main spectral peaks are determined from the experimental data.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2007.09.056