Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

• Published in: Journal of magnetism and magnetic materials Vol. 310; no. 2; pp. 1929 - 1931
• Main Authors: Chun, B.S., Kim, Y.K., Hwang, J.Y., Yim, H.I., Rhee, J.R., Kim, T.W.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2007; Elsevier Science
• Subjects: Amorphous magnetic material; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic transport in condensed matter; Exact sciences and technology; Magnetic properties and materials; Magnetic tunnel junctions; Physics; Sensitivity; Spin polarized transport; Studies of specific magnetic materials; Switching field; Tunneling magnetoresistance; Amorphous magnetic material; Sensitivity; 73.40.Gk; Switching field; 85.70.Kh; 75.50.Kj; Magnetic tunnel junctions; Tunneling magnetoresistance; Magnetic tunnel junctions; Amorphous magnetic material; Tunneling magnetoresistance; Switching field; Sensitivity; Tunnel effect; Ferromagnetic materials; Switching; Thin films; Thickness; Interfaces; Anisotropy; Tunnelling magnetoresistance; 85.70.Kh; 73.40.Gk; 75.50.Kj; Tunnel junction; Magnetic materials; Saturation magnetization; Magnetic properties
• ISSN: 0304-8853
• DOI: 10.1016/j.jmmm.2006.10.762

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni 16Fe 62Si 8B 14 free layers, were investigated. NiFeSiB has a lower saturation magnetization ( M s: 800 emu/cm 3) than Co 90Fe 10 and a higher anisotropy constant ( K u: 2700 erg/cm 3) than Ni 80Fe 20. By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field ( H sw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced.