Large-Area Monolayer n-Type Molecular Semiconductors with Improved Thermal Stability and Charge Injection

• Published in: Chinese physics letters Vol. 40; no. 3; pp. 38101 - 73
• Main Authors: Jiang, Sai, Peng, Lichao, Du, Xiaosong, Dai, Qinyong, Guo, Jianhang, Gu, Jianhui, Su, Jian, Gu, Ding, Wang, Qijing, Guo, Huafei, Qiu, Jianhua, Li, Yun
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing Ltd 01.03.2023; School of Microelectronics and Control Engineering,Changzhou University,Changzhou 213164,China%National Laboratory of Solid-State Microstructures,School of Electronic Science and Engineering,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/40/3/038101

We fabricated monolayer n-type two-dimensional crystalline semiconducting films with millimeter-sized areas and remarkable morphological uniformity using an antisolvent-confined spin-coating method. The antisolvent can cause a downstream Marangoni flow, which improves the film morphologies. The deposited crystalline monolayer films exhibit excellent thermal stabilities after annealing, which reveals the annealing-induced enhancement of crystallinity. The transistors based on the n-type monolayer crystalline films show linear output characteristics and superior electron mobilities. The improved charge injection between monolayer films and Au electrodes results from the energy level shift as the films decrease to the monolayer, which leads to a lower injection barrier. This work demonstrates a promising method for fabricating air-stable, low-cost, high-performance, and large-area organic electronics.