Properties of the ubiquitous p–n junction in semiconductor nanowires

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Bibliographic Details
Published inSemiconductor science and technology Vol. 23; no. 7; p. 075016
Main Author Zervos, M
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.07.2008
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals
Exact sciences and technology
Physics
Defect states
Gallium arsenides
Band bending
Semiconductor materials
Doping
Self consistency
Electron charge distribution
Poisson equation
Subband
Effective mass model
Thickness
p n junctions
Schroedinger equation
Nanowires
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More Information
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/23/7/075016